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TYPICAL PERFORMANCE CURVES (R)
1200V APT13GP120B_S(G) APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
POWER MOS 7 IGBT
(R)
B
TO -2 47
D3PAK
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 600V, 10A * 50 kHz operation @ 600V, 16A * RBSOA Rated
C G E
S
G
C
E
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM RBSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT13GP120B_S(G) UNIT Volts
1200 30 41 20 50 50A @ 960V 250 -55 to 150 300
Amps
Reverse Bias Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 500A) Gate Threshold Voltage (VCE = VGE, I C = 1mA, Tj = 25C) MIN TYP MAX Units
1200 3 4.5 3.3 3.0 500
2 2
6 3.9
Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 13A, Tj = 125C) Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 25C)
Volts
I CES I GES
Gate-Emitter Leakage Current (VGE = 20V)
100
nA
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
050-7412
APT Website - http://www.advancedpower.com
Rev E
1-2006
Collector Cut-off Current (VCE = 1200V, VGE = 0V, Tj = 125C)
A
3000
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc RBSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT13GP120B_S(G)
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 600V I C = 13A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
1145 90 15 7.5 55 8 26 50 9 12 28 34 115 330 165 9 12 70 200 225 710 840 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Reverse Bias Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 960V Inductive Switching (25C) VCC = 600V VGE = 15V I C = 13A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 600V VGE = 15V I C = 13A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight MIN TYP MAX UNIT C/W gm
.50 N/A 5.9
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in figure 21, but with a Silicon Carbide diode.
1-2006 Rev E
5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7412
TYPICAL PERFORMANCE CURVES
40 35
IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)
40 35 30 25 20 15 10 5 0
TJ = 125C TJ = 25C TJ = -55C
APT13GP120B_S(G)
30 25 20 15 10 5 0
TJ = 125C TJ = 25C TJ = -55C
40
IC, COLLECTOR CURRENT (A)
FIGURE 1, Output Characteristics(TJ = 25C)
VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 13A C T = 25C
J
0 1 2 3 4 5 6 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
35 30 25 20 15 10 5 0
VCE = 240V
VCE = 600V
8 6 4 2 0
0 10 20 30 40 GATE CHARGE (nC) FIGURE 4, Gate Charge 50 60
TJ = -55C TJ = 25C TJ = 125C
VCE = 960V
0
2 3 4 5 6 7 8 9 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
1
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
6 5 4 3 2 1 0
5 IC = 26A IC = 13A
IC = 26A IC = 13A
4
3 IC = 6.5A
IC = 6.5A
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage
1.10
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0 -55
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
60
IC, DC COLLECTOR CURRENT(A)
50 40 30 20 10 0 -50
1.05
1.00
0.95
050-7412
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
0.90 -50
-25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature
Rev E
1-2006
12 10
100
td (OFF), TURN-OFF DELAY TIME (ns)
APT13GP120B_S(G)
td(ON), TURN-ON DELAY TIME (ns)
90 80 70 60 50 40 30 20
VCE = 600V 10 RG = 5 VGE =15V,TJ=25C VGE =15V,TJ=125C
VGE = 15V
8 6 4 2 0
VCE = 600V TJ = 25C or 125C RG = 5 L = 100 H
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current
30 25
RG = 5, L = 100H, VCE = 600V
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current
300 250
tf, FALL TIME (ns)
RG = 5, L = 100H, VCE = 600V
0
L = 100 H
tr, RISE TIME (ns)
20 15 10 5 0
200
TJ = 125C, VGE = 15V
150 100
TJ = 25C, VGE = 15V
TJ = 25 or 125C,VGE = 15V
50 0
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current
1400
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current
1600
EOFF, TURN OFF ENERGY LOSS (J)
= 600V V CE = +15V V GE R = 5
G
EON2, TURN ON ENERGY LOSS (J)
1200 1000 800 600 400 200 0
V = 600V CE V = +15V GE R = 5
G
1400 1200 1000 800 600 400 200 0
TJ = 125C
TJ = 125C
TJ = 25C
TJ = 25C
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current
1800
30 25 20 15 10 5 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current
1600
SWITCHING ENERGY LOSSES (J)
= 600V V CE = +15V V GE R = 5
G
SWITCHING ENERGY LOSSES (J)
1600 1400 1200 1000 800 600 400 200 0
Eoff,26A Eon2,26A
1400 1200 1000 800 600 400 200
Eon2,26A Eoff,13A Eoff,26A Eon2,13A Eon2,6.5A Eoff,6.5A
Eoff,13A Eon2,13A Eoff,6.5A
= 600V V CE = +15V V GE T = 125C
J
1-2006
Rev E
Eon2,6.5A
050-7412
50 40 30 20 10 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance 0
125 100 75 50 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0 25
TYPICAL PERFORMANCE CURVES
3,000 1,000 500 C, CAPACITANCE ( F)
P
60 Cies IC, COLLECTOR CURRENT (A) 50 40 30 20 10
APT13GP120B_S(G)
100 50
Coes
10
Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
1
0 200 400 600 800 1000 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0
0.60 0.50 0.40 0.30 0.20 0.10 0
ZJC, THERMAL IMPEDANCE (C/W)
0.9
0.7 0.5 0.3 0.1 0.05 10-5 10-4
Note:
PDM
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
181 FMAX, OPERATING FREQUENCY (kHz)
100
RC MODEL Junction temp. (C) 0.216 Power (watts) 0.284 Case temperature. (C) 0.161F 0.006F
50
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
T = 125C J T = 75C C D = 50 % V = XXXV CE R = 5
G
F
fmax2 = Pdiss =
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
10 15 20 25 30 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
10
5
050-7412
Rev E
1-2006
APT13GP120B_S(G)
Gate Voltage
APT15DQ120
10% TJ = 125C td(on)
V CC
IC
V CE
tr
Collector Current
90% 5%
Switching Energy
A D.U.T.
10%
5% Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
90%
Gate Voltage td(off)
TJ = 125C
90%
Collector Voltage
tf 10% 0
Switching Energy
Collector Current
Figure 23, Turn-off Switching Waveforms and Definitions
TO-247 Package Outline
e1 SAC: Tin, Silver, Copper
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC 15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
TO-268 (D3) Package Outline
e3 SAC: Tin, Silver, Copper
Collector (Heat Sink)
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062)
15.95 (.628) 16.05(.632)
1.04 (.041) 1.15(.045)
13.41 (.528) 13.51(.532)
Collector
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
4.50 (.177) Max.
2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084)
0.46 (.018) 0.56 (.022) {3 Plcs} 0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112) 1.98 (.078) 2.08 (.082)
1.27 (.050) 1.40 (.055)
1-2006
0.40 (.016) 0.79 (.031)
19.81 (.780) 20.32 (.800)
1.01 (.040) 1.40 (.055)
Gate Collector Emitter
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
5.45 (.215) BSC {2 Plcs.}
Heat Sink (Collector) and Leads are Plated
Rev E
2.21 (.087) 2.59 (.102)
050-7412
5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Emitter Collector Gate Dimensions in Millimeters (Inches)
APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.

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